Abstract
Cu CMP slurries are typically composed of abrasive particles, oxidants, etchants and corrosion inhibitors. The Cu surface is planarized by the CMP process via a repetitive process of oxidation by oxidants, followed by the corrosion inhibitor absorption on the Cu surface and the polish behavior generated by the etchant and abrasive particles. Benzotriazole (BTA) is a commonly used corrosion inhibitor in Cu CMP slurries to effectively prevent Cu from being etched by forming a passivation layer of Cu-BTA. However, benzotriazole exhibits poor solubility in water that can contribute to increased organic residue defect on the wafer surface. In this paper, we describe how we added Component A to be a corrosion inhibitor that was linked with benzotriazole by H-bonding to protect the Cu surface. We investigated the working mechanism for controlling Cu removal rate.
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