Abstract
Liquid phase epitaxy (LPE) of p-type PbTe on p-type Pb 0.8Sn 0.2Te has been used to produce substrates for two-color (3–5 and 8–14 μm) detectors. Diodes are formed on the LPE-produced substrates by using a planar diffusion technique. A twelve-element array operating at 80°K has been characterized under a nominal 300°K, 2π field-of-view (FOV) background. Average detectivities for the six Pb 0.8Sn 0.2Te diodes and six PbTe diodes are 2.2 × 10 10 cm Hz 1 2 /W and 1.0 × 10 11cm Hz 1 2 W, respectively.
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