Abstract
ABSTRACTLaser recrystallization of silicon on an insulating substrate has been carried out by irradiating polysilicon with both an Ar+ laser operating on all lines in the visible and a CO2 laser operating at 10.6 microns. These experiments were carried out over a variety of laser power densities and substrate temperatures. The use of the two lasers allowed for independent spatial control of temperature in both the polysilicon and the SiO2 layers and helped to reduce the strain at the polysilicon - SiO2 interface. We report the successful recrystallization of polysilicon films without substrate heating for two different silicon-on-insulator structures.
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