Two Bands Model for Nonradiative Multiphonon Recombination at Deep-Level Defects in Semiconductors

Abstract

Nonradiative multiphonon recombinations are described consistently as pairs of an electron capture and a hole capture with many electron representation. Adiabatic potentials are calculated as a sum of N electrons' energy and the potential energy of N ions with taking care of the cooperation of the electron-lattice interaction and the defect potential. It is shown that by the electron (hole) capture electronic energy of an order of the thermal depth of an electron (hole) localized at the defect is converted to the lattice energy. Every capture process can be enhanced by the transient lattice vibration triggered by the last opposite carrier capture. This actually occurs at almost every defects with lattice relaxation energy being larger than the half of the band gap width, when both carriers are injected with high density as is met in active laser diodes.