Abstract
An independently controllable, two-band quantum well infrared photo-detector (QWIP) based on the ZnCdSe/ZnCdMgSe material system is characterized. The two-band detector consists of two stacks of quantum wells absorbing in the mid- and long-wavelength infrared regime. Photocurrent and responsivity measurements resulted in 11 mA/W and 7 mA/W peak responsivities at 80 K with corresponding detectivities of 2 × 108 cm√Hz/W and 2 × 107 cm√Hz/W centered at 4.8 μm (258 meV) and 7.6 μm (163 meV). The two-band device can also perform as a broadband detector covering wavelengths from 4.4 μm (281 meV) to 8.2 μm (151 meV) at 80 K with a full width at half maximum of 130 meV. Two-band QWIP is tested for an absolute temperature detection application and good agreement is observed between theoretical calculation and experimental results.
Highlights
An independently controllable, two-band quantum well infrared photo-detector (QWIP) based on the ZnCdSe/ZnCdMgSe material system is characterized
The most frequently used two-band QWIP designs in the MWIR and LWIR regions are based on the InGaAs/AlGaAs9–11 and GaAs/AlGaAs9–11 material systems
The II-VI ZnCdSe/ZnCdMgSe lattice-matched to InP system presents itself as an alternative to address challenges associated with conventional material systems by its large conduction band offset up to 1.1 eV14 and the absence of scattering into satellite valleys.[15]
Summary
Two-band quantum well infrared photo-detector (QWIP) based on the ZnCdSe/ZnCdMgSe material system is characterized. QWIPs in the II-VI material system, lattice matched to InP; the two-band detectors are shown to function well in absolute temperature detection.
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