Two-band conduction of amorphous silicon nitride

Abstract

A method is proposed for determining the electron and hole components of stationary current flowing through an MIS structure and the hole and electron components of the stationary current in an MNOS structure have been determined. It is shown that the experimental results may be explained by a two-band Si3N4 conduction model. A two-band Si3N4 impurity conduction model with silicon microcrystals is examined, the latter serving as Poole-Frenkel centres in the nitride volume as well as trapping and recombination centres in the regions close to the electrodes. [Russian Text Ignored].