Two approaches to dislocation nucleation in the supported heteroepitaxial equilibrium islanding phenomenon

Abstract

We study the dislocation formation in 2D nanoscopic islands with two methods the Molecular Static method and the Phase Field Crystal method. It is found that both methods indicate the same qualitative stages of the nucleation process. The dislocations nucleate at the film-substrate contact point and the energy decreases monotonously when the dislocations are farther away from the island-wetting film contact points than the distance of the highest energy barrier.