Two ±0.7 V S 2 I class AB differentialmemory cells

Abstract

Two novel class AB sampled switched current memory cells are presented, together with simulation results obtained at a supply voltage of ±0.7 V. These cells exhibit a quiescent current that can be accurately controlled and is independent of the supply voltage. Furthermore, it is ensured that the minimum current passing through the memory transistors is equal to a well defined value, throughout the signal range. The first memory cell is based on a fully-differential architecture, while the second one can be used in single-ended or pseudo-differential circuits.