Twin-transverse-junction stripe laser with linear light/current characteristic and low threshold

Abstract

Lateral confinement of both light and carriers in the active region is achieved by creating twin transverse junctions with a deep Zn diffusion. The source is a stripe of SiO2 from which the Zn is diffused at low concentration into a highly n-doped double-heterostructure wafer. Threshold currents of around 30–40 mA have been measured and near and far fields of typically 3 μm and 10°, respectively, have been observed (both to half intensity). The optical control achieved results in linear light/current characteristics and zero-order-mode operation.