Abstract
The crystal quality of CdTe(111)/Si(111) epilayers grown by hot wall epitaxy (HWE) is investigated by symmetric and asymmetric high resolution X-ray diffraction (HRXRD) to reveal the main reason for the improved crystallinity when applying originally designed two-step growth method. HRXRD data show that the two-step growth method reduces twin content remarkably compared to the conventional one-step growth. The twin content in CdTe epilayer is extremely sensitive to the growth conditions, especially to the growth rate at the early stage of the crystal growth. The direct growth of high quality CdTe epilayer on Si(111) must be a promising substrate for fabricating high performance MCT infrared detectors.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
