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Abstract
The epitaxial growth of InP on (001)-oriented SrTiO3 (STO) is analyzed, and evidence is shown of the formation of twins during the early stages of the growth. A detailed crystallographic description of these twins is presented, and the origin of their formation is discussed. The elevated interface energy characteristic of the InP/STO system, combined with the initial three-dimensional growth of the semiconductor and with the existence of a commensurate heterointerface between STO and the twinned InP variant are identified as the main causes of twin formation during the growth of this highly heterogeneous epitaxial system.
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