Tuz Stresi Koşullarında Havuçta (Daucus carota L.) Eksojen Silikon Dioksit Uygulamaları

Abstract

In this study, the effects of exogenous silicon dioxide applications (0.5, 1, 1.5 mM SiO2) on the germination parameters of carrot seeds were investigated under salt stress conditions (150, 200 mM NaCl). For this purpose, germination percentage (GP), mean germination time (MGT), germination rate coefficient (CVG), germination rate index (GRI), germination index (GI), seedling viability index (SVI), leaf number, shoot and root lengths (mm) and plant fresh weight (g) were determined.
 Germination parameters of yellow carrot, sensitive to salt stress, were adversely affected by 150 mM NaCl application and shoot and root lengths were reduced by 80%. Especially SiO2 applications had a positive effect on germination parameters for the cultivar. In 150 mM NaCl application, the germination of the seeds treated with 0.5 mM SiO2 increased approximately two times (23%), and 15% germination was obtained in 200 mM NaCl, which did not germinate in the control. Although the black carrot cultivar tolerated salt stress, silicon dioxide treatments had a stimulating effect on germination and development. It was determined that especially 1.5 mM SiO2 application in black carrot seeds had a positive effect on germination parameters. Germination percentage increased to 93% in seeds treated with 1.5 mM SiO2 in 150 mM NaCl, and 86% at 200 mM NaCl concentration, reaching higher values compared to the control group. The results showed that pre-treatment with appropriate silicon concentrations significantly improved germination performance and promoted tolerance to the salt stress.