Turn-Off Behavior of 1.2 kV/25 A NPT-CIGBT Under Clamped Inductive Load Switching

Abstract

<para xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> For the first time, this paper analyzes the turn-off behavior of the planar 1.2 kV/25, a nonpunch-through clustered insulated gate bipolar transistor (NPT-CIGBT) under clamped inductive load switching, in detail and through experiment simulation. Turn-off behavior of the CIGBT involves strong interaction between device and circuit parameters. The circuit parameter such as gate resistance was varied in order to observe the <emphasis emphasistype="italic">dI</emphasis>/<emphasis emphasistype="italic">dt</emphasis>, <emphasis emphasistype="italic">dV</emphasis>/<emphasis emphasistype="italic">dt</emphasis>, and turn-off energy loss of the device. Experimental results are shown at 25 <formula formulatype="inline"><tex Notation="TeX">$^\circ$</tex></formula> C and 125 <formula formulatype="inline"><tex Notation="TeX">$^\circ$</tex></formula>C. In addition, numerical simulation results are used to enhance understanding of the internal physics of the NPT-CIGBT turn-off process. </para>