Abstract
We employ turbostratic stacked chemical vapor deposition (CVD) graphene for a mid-wavelength infrared (MWIR) photodetector using the photogating effect. Turbostratic stacked CVD graphene was fabricated by multiple transfer processes. Graphene field effect transistor-based MWIR photodetectors were developed using an InSb substrate. The effect of the three layers of turbostratic stacked graphene enhanced both the field-effect mobility and MWIR response by approximately three times, compared to that of a conventional single-layer graphene photodetector in vacuum at 77 K. Our results may contribute to the realization of low-cost, mass-producible, high-responsivity graphene-based infrared sensors.
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