Abstract
In the quantum Hall regime, we observed current steps in the I-V characteristics of Corbino-like devices with a narrow constriction, containing an artificial impurity. The constriction is defined by metallic gates. We investigated the features of the current steps as a function of the Landau level filling factor and the gate voltages at the constriction. A dominant role of the electrostatic boundary confinement near the side of electron injection (emitter of the electrons) was found. The observed effects can be explained conclusively by including the quasi-elastic inter-Landau-level tunnelling and the limitation of tunnelling current due to charging of the nonequilibrium electron states around the artificial impurity.
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