Abstract
Recently introduced theory of the electron tunnelling time in microstructures is compared with numerical results obtained with the help of other methods. The theory is applied to a more general case of nonsymmetrical semiconducting microstructure and quantitative conclusions are obtained concerning the possible influence of the tunnelling time on the dissipative effects within the potential barriers and on the instrument resolution of a hot electron spectroscopy device. Occurrence of negative values of the tunnelling time is demonstrated.
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