Abstract
A theoretical study of the tunnelling processes in broken-gap heterostructures is described. The analytical expressions for tunnelling probabilities T were obtained using the two-band approximation of the effective-mass method for single- and double-barrier structures made from InAs, AlxGa1-xSb and GaSb. It is shown that the effects of transformation of quasiparticles determine the properties of such heterostructures.
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