Abstract
The time behaviour of tunnelling phenomena in relaxation processes of various semiconductor heterostructure systems is investigated. We analyse the dynamical changes of scattering mechanisms and their effect on the corresponding carrier distribution which determines the tunnelling current. This is done for the case of resonant escape of a carrier population injected in a mesoscopic well between double barriers. Results are compared with those for non-resonant escape. Dynamical screening and charge build-up effects are also studied with and without an applied electric field. Competition between the various escape mechanisms is discussed.
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