Abstract
The tunnelling of photo-generated holes in a GaAs/AlGaAs double-barrier resonant tunnelling structure is studied under different bias conditions using photoluminescence (PL), PL excitation spectroscopy and time-resolved PL. For voltages biasing the structure in the non-resonant tunnelling regime, beyond the region of negative differential resistance, the transient PL signal (due to exciton recombination in the well) exhibits two time constants. The faster component is associated with the decay of excitons originating from holes photo-excited directly in the well. The slower time constant is associated with excitons created from holes photo-excited in the GaAs contact region, which subsequently tunnel into the well. Independent evidence for hole tunnelling is the observation of a PLE signal when the PL detection is set at the n=1 heavy hole exciton in the well and the excitation is scanned to lower energies, close to the bulk GaAs bandgap.
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