Abstract
We have prepared Bi 2Sr 2CaCu 2O 8−δ/Bi 2Sr 2YCu 2O 8−δ/Bi 2Sr 2CaCu 2O 8−δ (2 2 1 2 2 2 Y 2 2 2 1 2) planar heterojunctions (trilayer structures) using an in situ d.c.-sputtering process at high oxygen pressures onto (0 0 1) SrTiO 3 substrates. Bi 2Sr 2YCu 2O 8−δ films (semiconducting-like) 10 and 12 nm thick were used as artificial barriers. Composition and structure of the barrier and the superconducting electrodes are entirely compatible which allows epitaxial growth of the entire heterostructure. Gap-like structures of about 30 mV have been determined from tunnelling characteristics of the junctions. Linear conductance backgrounds as well as Zero Bias Anomalies (ZBA) are reported and discussed in detail.
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