Abstract
By the technique of in situ focused ion-beam implantation in an underlying doping layer followed by molecular beam epitaxy overgrowth of a double quantum-well we have fabricated adjusted one-dimensional and two-dimensional electrons with very thin barrier between them. Each of the electron systems could be contacted separately. The tunnelling resistance between electron layers increases at high in-plane magnetic fields. With magnetic fields perpendicular to the wire we can investigate the coupling of lower one-dimensional subband while in the parallel direction higher subband states hybridise. In the first case, we observed clear resonance in the tunnelling and electron transfer.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
