Tunneling Transport Simulation in Asymmetric Junction Devices with Evanescent States at a Junction Interface

Abstract

We have investigated tunneling transport in asymmetric tunnel junctions that have evanescent states formed at one side of the junction interfaces. We simulate the tunneling I V characteristics based on the transfer matrix technique and Simmon’s tunneling current formula. As the depth and the location of the evanescent states are changed, the tunneling current changes significantly. Our results show that the evanescent states play an important role in determining the tunneling transport in nanoelectronic devices containing tunnel junctions with a thin insulating layer.