Tunneling transport of mono- and few-layers magnetic van der Waals MnPS3

Sungmin Lee,Sangik Lee,Bae Ho Park,Je-Geun Park,Ki-Young Choi

doi:10.1063/1.4961211

Abstract

We have investigated the tunneling transport of mono- and few-layers of MnPS3 by using conductive atomic force microscopy. Due to the band alignment of indium tin oxide/MnPS3/Pt-Ir tip junction, the key features of both Schottky junction and Fowler-Nordheim tunneling (FNT) were observed for all the samples with varying thickness. Using the FNT model and assuming the effective electron mass (0.5 me) of MnPS3, we estimate the tunneling barrier height to be 1.31 eV and the dielectric breakdown strength as 5.41 MV/cm.

Highlights

We have investigated the tunneling transport of mono- and few-layers of MnPS3 by using conductive atomic force microscopy
The discovery of graphene and its rich physics subsequently unearthed has literally revolutionized the field of van der Waals materials and the list of newly found vdW systems are exploding at a fast pace.[1,2,3]
Upon close inspection of the ever growing list of the vdW materials, one can take an immediate note of the fact that there is hardly any magnetic vdW system in the list, with the only exception of the High-Tc superconductor Bi2Sr2CaCu2O8+d

Summary

Introduction

We have investigated the tunneling transport of mono- and few-layers of MnPS3 by using conductive atomic force microscopy. Tunneling transport of mono- and few-layers magnetic van der Waals MnPS3

Results

Conclusion