Abstract
We investigate the tunneling conductance in a normal metal/insulator/d-wave superconductor (NM/I/d-wave SC) junction with a barrier of thickness d and with an arbitrary gate voltage V0 applied across the barrier region, formed on the surface of a topological insulator, using the Dirac–Bogoliubov–de Gennes equation and Blonder–Tinkham–Klapwijk (BTK) formalism. We find that the tunneling conductance as a function of both d and V0 displays an oscillatory behavior whose amplitude decreases with increase of V0. We also find that when the Andreev resonant condition is met, the tunneling conductance approaches a maximum value of 2G0, independent of the gate voltage V0.
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