Abstract
Electron transport in ferroelectric tunnel junctions (FTJs) with a three-step-like barrier combining a dielectric, ferromagnetic, and ferroelectric was investigated theoretically. A significant enhanced tunneling electroresistance effect was observed as compared to traditional FTJs with a bilayer composite barrier. The spin polarization also could be enhanced in a certain orientation of ferroelectric polarization. A metal/dielectric/ferromagnetic/ferroelectric/metal FTJ with a large ferromagnetic thickness is preferred for the optimal performance. The ferroelectricity in the ferroelectric layer has a weak modulation effect on the spin polarization. This work provides a way to enhance the performance of FTJs and/or to control the spin-polarized electronic transport by structure engineering.
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