Abstract
Tunneling diodes with highly doped and abrupt pn-junctions, and p+nn+ diodes were fabricated by bonding 4 inch silicon wafers at room temperature. After low temperature annealing (300–800°C) the electrical properties of the bonding interface could be changed by applying high currents up to 500 A/cm2. For tunneling diodes stressed with high current densities negative resistance effects have been obtained. The p+nn+ diodes with bonded n+ and p+ emitters showed S-shaped current switching observed in p-n-I-M structures. It is shown that due to the presence of an oxide at the bonding interface the current is limited in bonded pn-junctions.
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