Abstract
The band edge structure of SnTe has been studied by the tunneling spectroscopy. Tunneling measurements are performed between room temperature and 140 K on the epitaxial SnTe films grown by the hot wall epitaxy method. The saddle point structure near the band edge is detected in the third derivative curve of the tunneling current vs bias voltage (d 3 I /d V 3 - V ). The energy difference between the band edge and the saddle point in the conduction band is about 80 meV, and is in good agreement with the theory.
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