Tunneling regenerated high-power dual-wavelength laser diodes

Abstract

A Novel structure of high power dual-wavelength semiconductor laser diode is proposed and fabricated. Two laser structures are cascaded by a high doping tunnel junction during the epitaxial growth. The lasers can emit at wavelength of 951nm and 987nm at the same time. Without facet coating, the output power of the dual-wavelength laser is as high as 3.1W at 3A. And the slope efficiency of these devices is about 1.21A/W. Much higher output power can be reached for those dual-wavelength lasers when modifying the structure. The external differential quantum efficiency of different cavity length devices is analyzed.