Abstract
Epitaxial La0.8Ag0.1MnO3+δ film with variant structure on ZrO2(Y2O3) substrate was grown for the first time, and the optical, magnetooptical, and transport properties of this film were studied in order to elucidate special features in the mechanism of conductivity and magnetoresistance (MR) in this film. An original method has been developed for separating the MR contributions related to the colossal MR near TC and the tunneling MR component. This method is based on the comparative analysis of data on the MR and the IR magnetotransmission of the film. It is established that the tunneling MR component is related to the large-angle boundaries of structural domains and its temperature dependence is described by the function \(\Delta \rho /\rho \sim (a + b/\sqrt T )\). The degree of spin polarization of charge carriers in the La0.8Ag0.1MnO3+δ film with variant structure amounts to P ∼ 0.5.
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