Abstract
The mechanism of resistance switching memory effect has always been a focused scientific topic. In this work, a new resistance conversion mechanism is put forward in a resistance switching device with sandwich structure, in which the Cu2ZnSnSe4 (CZTSe) is used as active layer and the F-doped SnO2 (FTO) and Al-doped ZnO (AZO) acts the top and bottom electrode, respectively. Through further in-depth study, an optimal memory effect in the FTO/CZTSe/AZO device is observed when the thickness of CZTSe film is ∼200 nm (dCZTSe = 200 nm). Finally, the memory characteristics of the resistance switching device is clarified in detail by using a physical model based on the tunneling of carrier at the Schottky barrier which are formed on the FTO/CZTSe and CZTSe/AZO interfaces.
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