Abstract
AbstractConductance‐voltage (G ‐V) and current‐voltage (J ‐V) measurements were applied to reveal the tunneling mechanisms of GaAs ultra‐shallow sidewall tunnel junctions, which were fabricated by molecular layer epitaxy. From the G ‐V results, peaks were detected at 2, 12 and 14 THz at 6 K. In the J ‐V measurements, the fine structure near the peak voltage and a step in the tunneling current in the negative resistance region can also be observed. The tunneling mechanism is discussed in terms of the band transition, deep level and phonon‐assisted tunneling. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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