Abstract
A magnetic tunnel junction (MTJ) consists of an ultrathin insulating layer (tunnel barrier) sandwiched between two ferromagnetic (FM) metal layers (electrodes), as shown in Figure 11.1a. e resistance of MTJ depends on the relative magnetic alignment (parallel or antiparallel) of the electrodes. e tunnel resistance, R, of MTJ is lower when the magnetizations are parallel than it is when the magnetizations are antiparallel, as shown in Figure 11.1b. at is, RP < RAP. is change in resistance with the relative orientation of the two magnetic layers, called the tunnel magnetoresistance (TMR) e¥ect, is one of the most important phenomena in spintronics. e size of this e¥ect is measured by the fractional change in resistance (RAP − RP)/ RP × 100 (%), which is called the magnetoresistance (MR) ratio. e MR ratio at room temperature (RT) and a low magnetic ¢eld (typically <10 mT) represent a performance index for industrial applications.
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