Abstract
We have performed time-resolved photoluminescence on GaAs/AlxGa1−xAs single quantum well structures with an electric field applied perpendicular to the well plane. The quantum wells are coupled to the GaAs continuum through a thin barrier; the escape time of the electrons in the well was measured by time-resolved photoluminescence. The dependence of the decay time on applied bias was found to agree very well with a simple semiclassical model.
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