Abstract
Tunneling spectroscopy performed with the scanning tunneling microscope (STM) has been used to study unoccupied surface states. The experiments show an oscillatory behavior in the curves d I/d V a versus the applied voltage V a in the constant current mode. Such oscillations have been observed in two different situations: either V a coincides with allowed band energies, as in Au(110), or it lies within a gap, as in Ni(100). We have calculated the current for a tunnel barrier between two plane electrodes in these two different cases. We have also included an optical potential which takes into account the existence of inelastic processes. Our results show that the oscillatory behavior of tunnel spectra measured with the STM reflects the existence of localized surface states at the crystal-vacuum interface.
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