Abstract
We deposited YBa 2Cu 3O 7−x/Y 2O 3/YBa 2Cu 3O 7−x heterostructures by a dc/rf sputtering process at high oxygen pressures on (001) SrTiO 3 substrates. The deposition conditions of Y 2O 3 are completely compatible with those of YBa 2Cu 3O 7−x. The crystal structure of Y 2O 3 provides a close lattice match with YBa 2Cu 3O 7−x which results in high quality epitaxial trilayers with no foreign phases in the structure. Both bottom and top YBa 2Cu 3O 7−x layers are superconducting above 90 K. The thicknesses of the intermediate artificial Y 2O 3 layers range from 3 to 5 nm. Tunneling measurements on these planar junctions exhibited an anisotropic gap structure without zero bias anomalies. Gap structures at 9.6 K are clearly seen at about 20 and 5 mV bias voltages. These values are discussed considering the contributions from both ab-plane and quasiparticle tunneling processes.
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