Abstract
Tunneling-assisted impact ionization across the conduction-band-edge discontinuity of quantum-well heterostructures is investigated and applied to a new superlattice structure. We consider multiquantum-well structures where the quantum-well regions are heavily doped and the undoped barrier regions are essentially insulating. Incident hot electrons due to the applied electric field perpendicular to the heterointerface interact with the two-dimensional electrons confined to the quantum wells through Coulomb force. The resultant electrons can either have enough energy to get out of the wells or tunnel through the triangular barriers. A new analytical approximation for the impact ionization rate is given which compares favorably with numerical results. The tunneling-assisted impact ionization rates and the ionization coefficients are calculated. It is shown that the tunneling effect reduces the ionization threshold and enhances the ionization rate significantly.
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