Tunneling Anisotropic Magnetoresistance in L10-MnGa Based Antiferromagnetic Perpendicular Tunnel Junction**Supported by the National Basic Research Program of China under Grant No 2015CB921500, the National Natural Science Foundation of China under Grant Nos 61334006 and 11774339, the Key Research Project of Frontier Science of the Chinese Academy of Sciences under Grant No QYZDY-SSW-JSC015, and the Key Research Program of the Chinese

Abstract

We report on the tunneling anisotropic magnetoresistance in antiferromagnetic perpendicular tunnel junction consisting of L10-MnGa/FeMn/AlOx/Pt grown on GaAs (001) substrates by molecular-beam epitaxy. The temperature-dependent perpendicular exchange bias effect reveals an exchange coupling between ferromagnetic L10-MnGa and antiferromagnetic FeMn. The rotation of antiferromagnetic spins in FeMn can be driven by perpendicularly magnetized L10-MnGa due to the exchange-spring effect at the interface and leads to room-temperature tunneling anisotropic magnetoresistance ratio of 0.86%. We also find that the tunneling anisotropic magnetoresistance strongly depends on temperature and angle. These results have broadened the material selection range for high performance antiferromagnetic spintronic devices.