Abstract
Tunnel-regenerated multiple-active-region (TRMAR) light-emitting diodes (LEDs) with high quantum efficiency and high brightness have been proposed and fabricated. We have proved experimentally that the efficiency of the electrical luminescence and the on-axis luminous intensity of such TRMAR LEDs scaled linearly approximately with the number of the active regions. The on-axis luminous intensity of such TRMAR LEDs with only 3 μm GaP current spreading layer have exceeded 5 cd at 20 mA dc operation under 15° package. The high-quantum-efficiency and high-brightness LEDs under the low injection level were realized.
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