Tunnel oxide thickness-dependent dominant carrier transport in crystalline silicon solar cells

Abstract

Silver consumption reduction is a current development in commercial tunnel passivated contact (TOPCon) crystalline silicon solar cell devices aimed at lowering the entire production cost of photovoltaic energy sources. It depends on the number of fingers and/or finger spacing (SP) on a cell area. In this paper, we analyze the possibility of minimizing silver use with respect to the dominant carrier transport mechanism. The carrier transporting mechanism, such as “pinhole” and/or “tunnel” models, is identified by examining temperature-dependent I–V characteristics of polysilicon passivating contact as a function of tunnel oxide (TO) thickness from 0.6 to 2.2 nm. Thermal oxidation was used to produce ultrathin TO films (0.6–2.2 nm) with temperature and gas ratio controlled. We find that the “pinholes” transport mechanism prevails when the TO thickness exceeds 1.6 nm, whereas the “tunnel” mode dominates when the TO thickness is less than 1.4 nm. The pinhole density is critical in pinhole mode for increasing SP. It is found that low pinhole densities and thick TO thickness (more than 1.6 nm) are two of the primary causes of narrow SP in TOPCon devices, which need a considerable quantity of silver. The experimental TOPCon devices as a function of TO thickness show a considerable trade-off between open circuit voltage (Voc) and fill factor (FF). While Voc rises, FF drops as TO thickness increases. The mechanism is described.