Abstract
In a recent publication we have proposed an explanation for the operation of Schottky‐barrier solar cells with an interfacial oxide layer based on the concept that they are minority‐carrier nonequilibrium MIS tunnel diodes. Such devices represent a potentially low‐cost method for fabricating large‐scale solar‐energy‐conversion arrays both with single crystals and polycrystalline film semiconductors. These solar cells are identical to the conventional p–n junction device except for the location of the depletion region. Our calculations indicate that one would have to grow defect‐free ultra‐thin (10–15 Å in the case of Al–SiO2–Si structure) interfacial oxide layers to get highest conversion efficiencies from these devices. Performance of tunnel MIS solar cells will be described with main emphasis on the role of surface states and oxide charges.
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