Abstract
Electric current in a double-barrier junction with an atomic-size spacer (quantum dot) and ferromagnetic external electrodes is analyzed theoretically in the sequential tunneling regime. Master equation method is applied to calculate the average occupation numbers, electric current and tunnel magnetoresistance (TMR). It is shown that the Coulomb correlations on the dot can suppress electric current and lead to diode-like behavior. It is also shown that the Coulomb correlations can enhance TMR in a certain bias range. Variation of electric current and the TMR effect with increasing temperature is also studied.
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