Abstract
We consider a new type of magnetic tunnel junction, which consists of twoferromagnetic tunnel barriers acting as spin filters (SFs), separated by anonmagnetic metal (NM) layer. Using the transfer matrix method and thefree-electron approximation, the dependence of the tunnel magnetoresistance(TMR) on the thickness of the central NM layer, bias voltage and temperature inthe double SF junction are studied theoretically. It is shown that the TMR andelectron-spin polarization in this structure can reach very large values undersuitable conditions. The highest value of the TMR can reach 99%. By anappropriate choice of the thickness of the central NM layer, the degree of spinpolarization in this structure will be higher than that of the single SF junctions.These results may be useful in designing future spin-polarized tunnelling devices.
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