Abstract
Magnetic tunnel junctions (MTJs) consisting of ferromagnetic metal (Cr1−δTe) and semiconductor (Ga1−xMnxAs) electrodes with an AlAs tunnel barrier have been fabricated. A nonlinear behavior was clearly observed in the current versus bias-voltage characteristics, suggesting that the electric transport between the two ferromagnetic electrodes is tunneling. The MTJs exhibited the tunnel magnetoresistance (TMR) effect up to 14.5% at 5K. The TMR ratio was observed to rapidly decrease with increasing temperature and bias voltage. These experimental results imply that Cr1−δTe is applicable to the spintronic devices based on III-V semiconductors.
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