Abstract
This work concerns tunnel junctions with yttrium oxide barrier prepared by plasma oxidation of a 1.5-nm Y film. The magnetoresistive properties of the junctions were studied as a function of the ferromagnetic (FM) electrodes in contact with the barrier, such as CoFe, Py (permalloy), and CoFeNiSiB. The maximum measured tunnel magnetoresistance (TMR) effect was 25% at room temperature -raised to over 40% at 5 K. The TMR and the tunnel barrier characteristics (thickness, height, and asymmetry) depend significantly on the FM electrodes and the annealing temperature. Barrier heights of less than 1 eV have been extracted in all cases -two to three times lower than the ones reported for AlO/sub x/-based junctions.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
