Abstract
Incorporation of tunnel junctions (TJs) to device structure enabled vertical integration of multicolor light emitting diodes (LEDs) and laser diodes (LDs). The TJs allows to control the current path in distributed-feedback LDs and micro-LEDs. It opens possibility to design new architecture devices like “inverted” LEDs or LDs with TJs located below active region. These devices have the sequence of p and n type layers similar to structures grown on hypothetical p-type (0001) GaN substrate, which is beneficial for high carrier injection efficiency, and enables operation at cryogenic temperatures. Finally, we also discuss the properties of bi-directional LEDs and wavelength-tunable LEDs.
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