Abstract
We describe the low resistance of tunnel junction structures with a p+-AlGaAs layer grown on an InP substrate using the autodoping technique. An Al0.4Ga0.6As layer showed a hole concentration of 2.4 × 1020 cm−3 without additional material sources. We demonstrated that the proposed tunnel junction structure with a p+-Al0.4Ga0.6As/In0.52Al0.48As multiple-quantum-well layer on an InP substrate exhibited a low resistance of 2.5 × 10−5 Ω cm2, as estimated from reverse current–voltage characteristics, and a tunnel peak current density of 170 A/cm2.
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