Abstract
Tunnel field-effect transistor (TFET) with asymmetric gate dielectric and body thickness (TFETAsy) is proposed. The TFETAsy not only reduces the tunneling resistance by using the thinner source-side gate dielectric and body, but also suppresses the ambipolar current (Iambipolar) and the degradation of alternating current (AC) switching performances with the thicker drain-side gate dielectric and body. Technology computer aided design process and device/circuit simulations are performed to verify the validity of the TFETAsy in terms of fabrication process and electrical characteristics. From the simulation results, it is revealed that the thinner source-side gate dielectric and body can be simply formed by oxide wet-etching after the selective oxidation of the source-side body. Moreover, the thinner source-side SiGe body can be also formed by using Ge condensation process instead of the oxidation. Additionally, it is confirmed that the TFETAsy has higher on-current, steeper subthreshold swing, lower Iambipolar and improved AC switching characteristics as compared to those of conventional TFET with symmetric structure.
Published Version
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