Abstract

The tunnel conductance of diluted ferromagnetic semiconductor tunnel junction GaN:Mn/AlN/GaN:Mn is calculated based on the first-principles calculations. The dependence of the conductance on AlN barrier thickness, doping site, and doping concentration of Mn is studied. The contributions from coherent tunneling and resonant tunneling are discussed by combining the complex band structure of AlN barrier layer and the interface states on both sides of the barrier.

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