Abstract
In this study, the effect of the oxygen profile and thickness of multiple-layers TiOx on tunnel barrier characteristics was investigated to achieve high non-linearity in low-resistance state current (ILRS). To form the tunnel barrier in multiple-layer of TiOx, tunnel barrier engineering in terms of the thickness and oxygen profile was attempted using deposition and thermal oxidation times. It modified the defect distribution of the tunnel barrier for effective suppression of ILRS at off-state (½VRead). By inserting modified tunnel barrier in resistive random access memory, a high non-linear ILRS was exhibited with a significantly lowered ILRS for ½VRead.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
