Abstract
We consider the problem of c-axis transport in double-layered cuprates, in particular with reference toBi2Sr2CaCu2O8+δ compounds. We exploit the effect of the two barriers on the thermal and tunneltransport. The resulting model is able to describe accurately the normal statec-axisresistivity in Bi2Sr2CaCu2O8+δ, from the underdoped side up to the strongly overdoped. We extend the model, withoutintroducing additional parameters, in order to allow for the decrease of the barrier when anexternal voltage bias is applied. The extended model is found to describe properly thec-axis resistivity for small voltage bias above the pseudogap temperatureT*,the c-axis resistivity for large voltage bias even belowTc, and thedifferential dI/dV curves taken in mesa structures.
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